Gary Gan (@gary_gan78) • photos and videos

gan78Besides these intrinsic advantages, there is also a great interest in the possibility to grow AlGaNGaN heterostructures on low-cost large-area (up to 200 mm) Si substrates, due toIn this study, we investate the GaN SB PDs with graded doping prepared on PSS, turning out that: (1) the fabricated devices have an extremely low dark current, a large UV-to